Intellectual Property India Publishes Patent Application for 'Low Voltage Enhancement-Mode Gan Rf Transistor And Methods Of Manufacturing Thereof' Filed by Agnit Semiconductors Private Limited

MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541038068 A) filed by Agnit Semiconductors Private Limited, Bengaluru, Karnataka, on April 21, 2025, for 'low voltage enhancement-mode gan rf transistor and methods of manufacturing thereof.'

Inventor(s) include Sandeep Kumar; Terirama Thingujam; Richika Arya; Nithin; Hareesh Chandrasekar; and Digbijoy N Nath.

The application for the patent was published on Feb. 13, under issue no. 07/2026.

According to the abstract released by the Intellectual Property India: "The present invention discloses a normally-off GaN High Electron Mobility Transistor (HEMT) optimized for low-voltage RF applications, including battery-powered devices and wireless commun...