Intellectual Property India Publishes Patent Application for 'Localized Thermal Gradient Reactor For Additive-Free Hydrothermal Growth Of Highaspect Ratio Nanostructures' Filed by C. V. Raman Global University

MUMBAI, India, Feb. 6 -- Intellectual Property India has published a patent application (202631010866 A) filed by C. V. Raman Global University, Bhubaneswar, Orissa, on Feb. 2, for 'localized thermal gradient reactor for additive-free hydrothermal growth of highaspect ratio nanostructures.'

Inventor(s) include Dr. Surya Prakash Ghosh; and Dr. Jyoti Prakash Kar.

The application for the patent was published on Feb. 6, under issue no. 06/2026.

According to the abstract released by the Intellectual Property India: "The present invention relates to a localized thermal gradient reactor and process for additive-free hydrothermal synthesis of high-aspect-ratio nanostructures, particularly applicable to metal oxides such as zinc oxide (ZnO) and o...