Intellectual Property India Publishes Patent Application for 'Lithography-Enhanced Vertically and Laterally Tapered III Nitride HEMTs (VLT HEMTs) and Manufacturing Methods Thereof' Filed by Agnit Semiconductors Private Limited

MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541004846 A) filed by Agnit Semiconductors Private Limited, Bengaluru, Karnataka, on Jan. 21, 2025, for 'lithography-enhanced vertically and laterally tapered iii nitride hemts (vlt hemts) and manufacturing methods thereof.'

Inventor(s) include Sandeep Kumar; Kritika Sur; Mukundh M Srivathsan; Terirama Thingujam; Hareesh Chandrasekar; and Digbijoy N Nath.

The application for the patent was published on Feb. 13, under issue no. 07/2026.

According to the abstract released by the Intellectual Property India: "The invention relates to a novel GaN High Electron Mobility Transistor (HEMT) design featuring a tapered gate structure that enhances linearit...