Intellectual Property India Publishes Patent Application for 'High Specific Capacity Layered Double Hydroxide And Telluride-Based Electrode Preparation Method And Application Thereof' Filed by Indian Institute Of Technology

MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202511132536 A) filed by Indian Institute Of Technology, Roorkee, Uttarakhand, on Dec. 27, 2025, for 'high specific capacity layered double hydroxide and telluride-based electrode preparation method and application thereof.'

Inventor(s) include Prof. Ashish Yadav; Ms. Antra Choubey; and Mr. Himanshu Chauhan.

The application for the patent was published on Feb. 13, under issue no. 07/2026.

According to the abstract released by the Intellectual Property India: "The present invention relates to a composite electrode material comprising cobalt-vanadium layered double hydroxide (CoV-LDH) grown in situ over a molybdenum telluride (MoTe2) structure deposit...