Intellectual Property India Publishes Patent Application for 'Gallium Nitride Transistors And Power Amplifiers For Ultra-High And Very High Frequency Radios' Filed by Agnit Semiconductors Private Limited

MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541062434 A) filed by Agnit Semiconductors Private Limited, Bengaluru, Karnataka, on June 30, 2025, for 'gallium nitride transistors and power amplifiers for ultra-high and very high frequency radios.'

Inventor(s) include Bandla Mousami; Terirama Thingujam; Richika Arya; Nithin; Hareesh Chandrasekar; and Digbijoy N Nath.

The application for the patent was published on Feb. 13, under issue no. 07/2026.

According to the abstract released by the Intellectual Property India: "The invention relates to a gallium nitride (GaN)-based power amplifier is disclosed for low-power radio frequency (RF) applications in the very-high frequency (VHF) and ultra-hi...