Intellectual Property India Publishes Patent Application for 'Bi-Layered Dense-Porous Burr Hole Defect Implant And Method Of Fabrication Thereof' Filed by Indian Institute Of Technology

MUMBAI, India, Jan. 9 -- Intellectual Property India has published a patent application (202431099585 A) filed by Indian Institute Of Technology, Kharagpur, West Bengal, on Dec. 16, 2024, for 'bi-layered dense-porous burr hole defect implant and method of fabrication thereof.'

Inventor(s) include Vaidya, Pravin Vasudeo; Seesala, Dr. Venkata Sundeep; Bagde, Dr. Ashutosh; Iratwar, Dr. Sandeep; Zahiruddin, Dr. Quazi Syed; Fulzele, Dr. Punit; and Dhara, Dr. Santanu.

The application for the patent was published on Jan. 9, under issue no. 02/2026.

According to the abstract released by the Intellectual Property India: "A bi-layered dense-porous burr hole defect implant fabricated using a slurry-based technique is disclosed. The implant comprise...