MUMBAI, India, May 30 -- Intellectual Property India has published a patent application (202311079994 A) filed by Professor Sajad A Loan; Hafsa Nigar; and Dr. Mohd Haris, New Delhi, on Nov. 24, 2023, for 'a high performance uni-gate v ertical power mosfet : a method of manufacturing the same.'
Inventor(s) include Professor Sajad A Loan; Hafsa Nigar; and Dr. Mohd Haris.
The application for the patent was published on May 30, under issue no. 22/2025.
According to the abstract released by the Intellectual Property India: "A novel uni-gate vertical power MOSJ'ET structure is proposed and the smethod of fabricating it is given. A single gate is used in the structure located below the source and the channel region. The vertical n-sourcefpbase ...