ALEXANDRIA, Va., May 12 -- United States Patent no. 12,627,138, issued on May 12, was assigned to REALTEK SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Electrical discharge circuit" was invented by Chung-Y... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,627,139, issued on May 12, was assigned to ABB Schweiz AG (Baden, Switzerland). "Systems and methods of power-voltage droop control for a direct... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,377, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Gate-all-around (GAA) field-effect transistor (FET) device having FETs wi... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,378, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor manufacturing" was inve... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,379, issued on May 12, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Thin film transistor and display panel" was invented by Don... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,380, issued on May 12, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Thin film transistor and display apparatus comprising the ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,381, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Wakeup-free ferroelectric memory devi... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,382, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interfacial dual passivation layer fo... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,383, issued on May 12, was assigned to Intel Corp. (Santa Clara, Calif.). "Transistors having stacked 2D material channel layers and heterog... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,384, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Enhanced-shaped extension region(s) for gate-all-around (GAA) field effec... Read More