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US Patent Issued to TCL China Star Optoelectronics Technology on April 14 for "Thin film transistor and array substrate" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,497, issued on April 14, was assigned to TCL China Star Optoelectronics Technology Co. Ltd. (Shenzhen, China). "Thin film transistor and a... और पढ़ें


US Patent Issued to TCL China Star Optoelectronics Technology on April 14 for "Thin film transistor and array substrate" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,497, issued on April 14, was assigned to TCL China Star Optoelectronics Technology Co. Ltd. (Shenzhen, China). "Thin film transistor and a... और पढ़ें


US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,498, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Memory device" was invented by Tatsuya... और पढ़ें


US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,498, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Memory device" was invented by Tatsuya... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor devices with embedded ferroelectric field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,499, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor devices with embedd... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor devices with embedded ferroelectric field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,499, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor devices with embedd... और पढ़ें


US Patent Issued to HRL Laboratories on April 14 for "N-type 2D transition metal dichalcogenide (TMD) transistor" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,500, issued on April 14, was assigned to HRL Laboratories LLC (Malibu, Calif.). "N-type 2D transition metal dichalcogenide (TMD) transisto... और पढ़ें


US Patent Issued to HRL Laboratories on April 14 for "N-type 2D transition metal dichalcogenide (TMD) transistor" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,500, issued on April 14, was assigned to HRL Laboratories LLC (Malibu, Calif.). "N-type 2D transition metal dichalcogenide (TMD) transisto... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,501, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,501, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong... और पढ़ें