ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,404, issued on Nov. 3, was assigned to Rambus Inc. (San Jose, Calif.). "Command-differentiated storage of internally and externally sourced ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,405, issued on Nov. 3, was assigned to Silicon Motion Inc. (Hsinchu County, Taiwan). "Control method of flash memory controller and associat... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,406, issued on Nov. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory system, controller, host and operation m... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,407, issued on Nov. 3, was assigned to Radian Memory Systems LLC (Plano, Texas). "Storage device with erase unit level address mapping" was ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,408, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Cloning based on block stripe versioning" was invented by Don... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,409, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Logical-to-physical mapping for enhanced granularity data sto... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,410, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Isolating garbage collection read operations in a memory sub-... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,411, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "System and methods for adaptive program-verify control in ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,412, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Method and apparatus for prefetching deep lear... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,413, issued on Nov. 3, was assigned to Ferroelectric GmbH (Charlotte-Buhler-Str., Germany). "Memory module including a non-volatile write ca... Read More