US Patent Issued to Intel on April 7 for "Techniques to map and access column read enabled memory" (Oregon, California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,463, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.). "Techniques to map and access column read enabled memory" was in... Read More

US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on April 7 for "SRAM with PUF dedicated sector standing-by" (French Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,464, issued on April 7, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris). "SRAM with PUF dedicated se... Read More

US Patent Issued to Etron Technology on April 7 for "Memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,465, issued on April 7, was assigned to Etron Technology Inc. (Hsinchu, Taiwan). "Memory device" was invented by Chun Shiah (Hsinchu, Taiwa... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Semiconductor memory devices with differential threshold voltages" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,466, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor memory devices with d... Read More

US Patent Issued to NUMEM on April 7 for "Adaptive memory management and control circuitry" (Arizona, Washington, Minnesota, California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,467, issued on April 7, was assigned to NUMEM INC. (Sunnyvale, Calif.). "Adaptive memory management and control circuitry" was invented by ... Read More

US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 7 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,468, issued on April 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD.. "Three-dimensional memory devices and fabricating methods the... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Nonvolatile memory device, storage device including the same, and method of testing nonvolatile memory device" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,469, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Nonvolatile memory device, storage device in... Read More

US Patent Issued to Yangtze Memory Technologies on April 7 for "Architecture and method for NAND memory operation" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,470, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Architecture and method for NAND memory opera... Read More

US Patent Issued on April 7 for "Non-volatile memory and corresponding manufacturing method" (French Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,471, issued on April 7. "Non-volatile memory and corresponding manufacturing method" was invented by Radouane Habhab (Marseilles, France), ... Read More

US Patent Issued to Micron Technology on April 7 for "Selectively erasing one of multiple erase blocks coupled to a same string using gate induced drain leakage" (Singaporean, American, Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,472, issued on April 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Selectively erasing one of multiple erase blocks coupled to... Read More

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