ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,468, issued on April 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD.. "Three-dimensional memory devices and fabricating methods the... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,469, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Nonvolatile memory device, storage device in... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,470, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Architecture and method for NAND memory opera... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,471, issued on April 7. "Non-volatile memory and corresponding manufacturing method" was invented by Radouane Habhab (Marseilles, France), ... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,472, issued on April 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Selectively erasing one of multiple erase blocks coupled to... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,473, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Multi-step read pass voltage discharge for ICC reduc... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,474, issued on April 7, was assigned to Hosin Global Electronics Co. LTD (Shenzhen, China). "Reading voltage management method and storage ... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,475, issued on April 7, was assigned to Kioxia Corp. (Tokyo). "Memory system, control method thereof, and program" was invented by Yoshihis... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,476, issued on April 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Program verify compensation in a memory device with a defec... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,477, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Detection of leakage current in flash memory"... Read More