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US Patent Issued to MACRONIX INTERNATIONAL on July 21 for "Vertical 3D cross point memory" (New York Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,397, issued on July 21, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Vertical 3D cross point memory" was invented by... Read More


US Patent Issued to Massachusetts Institute of Technology on July 21 for "Transistor structure and methods of forming the same" (American, Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,398, issued on July 21, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.). "Transistor structure and methods of form... Read More


US Patent Issued to ASM IP Holding on July 21 for "Methods and systems for filling a gap" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,399, issued on July 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods and systems for filling a gap" was invented by ... Read More


US Patent Issued to Versum Materials US on July 21 for "Composition and methods using same for carbon doped silicon containing films" (South Korean, American, Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,400, issued on July 21, was assigned to Versum Materials US LLC (Tempe, Ariz.). "Composition and methods using same for carbon doped silico... Read More


US Patent Issued to Resonac on July 21 for "Etching gas, etching method, and method for producing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,401, issued on July 21, was assigned to Resonac Corp. (Tokyo). "Etching gas, etching method, and method for producing semiconductor device"... Read More


US Patent Issued to CENTRAL GLASS on July 21 for "Surface treatment method, dry etching method, cleaning method, production method for semiconductor device, and etching device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,402, issued on July 21, was assigned to CENTRAL GLASS COMPANY Ltd. (Yamaguchi, Japan). "Surface treatment method, dry etching method, clean... Read More


US Patent Issued to Applied Materials on July 21 for "Halogen-free etching of silicon nitride" (California Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,403, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Halogen-free etching of silicon nitride" was invente... Read More


US Patent Issued to Applied Materials on July 21 for "Methods of selectively etching silicon nitride" (Singaporean, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,404, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods of selectively etching silicon nitride" was ... Read More


US Patent Issued to Applied Materials on July 21 for "Purge system to clean wafer backside for ring susceptor" (California Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,405, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Purge system to clean wafer backside for ring suscep... Read More


US Patent Issued to Applied Materials on July 21 for "Spacer patterning process with flat top profile" (California Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,406, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Spacer patterning process with flat top profile" was... Read More