ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,471, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and met... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,472, issued on July 28, was assigned to NXP USA INC. (Austin, Texas). "Semiconductor device with self-aligned gate and field plate and meth... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,473, issued on July 28, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "High-electron-mobility transistors with active blocks" wa... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,474, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device and method for manuf... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,475, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor having segm... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,476, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea). "Semiconductor device and method for fabricat... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,477, issued on July 28, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Vertical transistor and method for fabricating the same"... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,478, issued on July 28, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Vertical semiconductor component, and method for its produ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,480, issued on July 28, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. ... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,481, issued on July 28, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Field-effect transistors with self-aligned p-shield conta... Read More