Exclusive

Publication

Byline

Location

US Patent Issued to ETRON TECHNOLOGY on June 23 for "3D IC structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,629, issued on June 23, was assigned to ETRON TECHNOLOGY INC. (Hsinchu, Taiwan). "3D IC structure" was invented by Chao-Chun Lu (Hsinchu, T... Read More


US Patent Issued to ROHM on June 23 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,630, issued on June 23, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Masahiko Arimura (Kyoto, Japan... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Decoupling FinFET capacitors" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,631, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Decoupling FinFET capacitors" w... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Treatment of electrodes of MIM capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,632, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Treatment of electrodes of MIM capa... Read More


US Patent Issued to DENSO on June 23 for "Signal transmission device" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,633, issued on June 23, was assigned to DENSO Corp. (Kariya-city, Japan). "Signal transmission device" was invented by Shuji Asano (Kariya-... Read More


US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including supporter" (South Korean Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,634, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including supporter"... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Semiconductor contact structures and methods" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,636, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor contact structures an... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Method of forming a contact plug using an hourglass-shaped opening to prevent a bowing profile" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,637, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming a contact plug us... Read More


US Patent Issued to Marvell Asia on June 23 for "Gate all-around (GAA) field effect transistors (FETS) having vertical source and drain" (California Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,638, issued on June 23, was assigned to Marvell Asia Pte Ltd (Singapore). "Gate all-around (GAA) field effect transistors (FETS) having ver... Read More


US Patent Issued to Avago Technologies International Sales on June 23 for "Gate all-around laterally diffused metal-oxide semiconductor field effect transistor" (California Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,639, issued on June 23, was assigned to Avago Technologies International Sales Pte. Ltd. (Singapore). "Gate all-around laterally diffused m... Read More