ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,589, issued on June 23, was assigned to SWAYSURE TECHNOLOGY Co. LTD. (Shenzhen, China). "Memory cell, memory, and method of manufacturing t... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,590, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device and method fo... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,591, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Method for preparing semiconductor structur... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,592, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Methods of manufacturing semiconductor devic... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,593, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device and method of fa... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,594, issued on June 23, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor memory device and ... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,595, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and manufactur... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,596, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device" was invented... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,597, issued on June 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory devices having vertical transistors an... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,598, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor structure and fabrication method t... Read More