US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Phase change element configured to increase discrete data states" (Taiwanese Inventor)

Posted On: 2026-04-15

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,127, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change element configured t... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods" (Taiwanese Inventors)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,128, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Methods of controlling PCRAM devi... Read More

US Patent Issued to Micron Technology on April 14 for "Ramp-based biasing in a memory device" (California Inventor)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,129, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Ramp-based biasing in a memory device" was invented by Ha... Read More

US Patent Issued to SHANGHAI IC R&D CENTER on April 14 for "Memory and reading, writing and erasing methods thereof" (Chinese Inventors)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,130, issued on April 14, was assigned to SHANGHAI IC R&D CENTER Co. LTD. (Shanghai). "Memory and reading, writing and erasing methods ther... Read More

US Patent Issued to MACRONIX International on April 14 for "Gate-controlled thyristor and CAM array" (Taiwanese Inventors)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,131, issued on April 14, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Gate-controlled thyristor and CAM array" was ... Read More

US Patent Issued to Micron Technology on April 14 for "Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems each with a filled trench within a stadium structure of at least one block" (Idaho Inventors)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,132, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Methods of forming microelectronic devices, and related m... Read More

US Patent Issued to Micron Technology on April 14 for "Slow charge loss monitor for power up performance boosting" (Idaho, Colorado Inventors)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,133, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Slow charge loss monitor for power up performance boostin... Read More

US Patent Issued to Greenliant IP on April 14 for "NOR memory cell with floating gate" (California Inventor)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,134, issued on April 14, was assigned to Greenliant IP LLC (Santa Clara, Calif.). "NOR memory cell with floating gate" was invented by Bin... Read More

US Patent Issued to Sandisk Technologies on April 14 for "Uniform GIDL current during NAND erase" (California Inventors)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,135, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Uniform GIDL current during NAND erase" was invent... Read More

US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE D'AIX-MARSEILLE on April 14 for "Three-dimensional NOR memory structure with resistive memory cells" (French Inventors)

Posted On: 2026-04-15

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ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,136, issued on April 14, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris), CENTRE NATIONAL DE LA RECH... Read More

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US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Phase change element configured to increase discrete data states" (Taiwanese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods" (Taiwanese Inventors)

US Patent Issued to Micron Technology on April 14 for "Ramp-based biasing in a memory device" (California Inventor)

US Patent Issued to SHANGHAI IC R&D CENTER on April 14 for "Memory and reading, writing and erasing methods thereof" (Chinese Inventors)

US Patent Issued to MACRONIX International on April 14 for "Gate-controlled thyristor and CAM array" (Taiwanese Inventors)

US Patent Issued to Micron Technology on April 14 for "Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems each with a filled trench within a stadium structure of at least one block" (Idaho Inventors)

US Patent Issued to Micron Technology on April 14 for "Slow charge loss monitor for power up performance boosting" (Idaho, Colorado Inventors)

US Patent Issued to Greenliant IP on April 14 for "NOR memory cell with floating gate" (California Inventor)

US Patent Issued to Sandisk Technologies on April 14 for "Uniform GIDL current during NAND erase" (California Inventors)

US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE D'AIX-MARSEILLE on April 14 for "Three-dimensional NOR memory structure with resistive memory cells" (French Inventors)