ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,640, issued on Sept. 1, was assigned to QUALCOMM Inc. (San Diego). "Memory circuit architecture with multiplexing between memory banks" was... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,641, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory system and memory die with cascaded calcu... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,642, issued on Sept. 1, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Memory device, operation method of the same and... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,643, issued on Sept. 1, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device" was invented by Zhao Lu (Ebina, Japan), Yuji Na... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,644, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Processing-in-memory (PIM) device for performing a burst m... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,645, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Bipolar decoders for nonvolatile memory" was invente... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,646, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Ferroelectric in-memory computing" was inven... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,647, issued on Sept. 1, was assigned to SK hynix Inc. (Gyeong3gi-do, South Korea). "Semiconductor device and memory device including sampli... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,648, issued on Sept. 1, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Memory apparatus, refresh control circuit and r... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,649, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory devices and operating methods thereof,... Read More