US Patent Issued to International Business Machines on Sept. 1 for "Ferroelectric in-memory computing" (New York, Georgia Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,646, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Ferroelectric in-memory computing" was inven... Read More

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and memory device including sampling circuit" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,647, issued on Sept. 1, was assigned to SK hynix Inc. (Gyeong3gi-do, South Korea). "Semiconductor device and memory device including sampli... Read More

US Patent Issued to Winbond Electronics on Sept. 1 for "Memory apparatus, refresh control circuit and row hammer refresh method" (Taiwanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,648, issued on Sept. 1, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Memory apparatus, refresh control circuit and r... Read More

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory devices and operating methods thereof, memory systems, and sensing circuits" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,649, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory devices and operating methods thereof,... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Memory device having unity buffers with output current limiters" (Italian Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,650, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having unity buffers with output current limi... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor memory devices and electronic devices including the semiconductor memory devices" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,651, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices and electronic ... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Apparatus for small swing data transfer" (Japanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,652, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Apparatus for small swing data transfer" was invented by Ha... Read More

US Patent Issued to NORTHROP GRUMMAN SYSTEMS on Sept. 1 for "Leakage compensation circuit for content addressable memory (CAM) cell" (Maryland, New York Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,654, issued on Sept. 1, was assigned to NORTHROP GRUMMAN SYSTEMS Corp. (Falls Church, Va.). "Leakage compensation circuit for content addre... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Redundancy and majority voting in a key-value data storage system using content addressable memory" (American, Italian Inventors)

Posted On: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,655, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Redundancy and majority voting in a key-value data storage ... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Integrated circuitry, memory circuitry comprising strings of memory cells, and methods used in forming integrated circuitry" (Singaporean, American Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,656, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated circuitry, memory circuitry comprising strings o... Read More

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US Patent Issued to International Business Machines on Sept. 1 for "Ferroelectric in-memory computing" (New York, Georgia Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and memory device including sampling circuit" (South Korean Inventors)

US Patent Issued to Winbond Electronics on Sept. 1 for "Memory apparatus, refresh control circuit and row hammer refresh method" (Taiwanese Inventor)

US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory devices and operating methods thereof, memory systems, and sensing circuits" (Chinese Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Memory device having unity buffers with output current limiters" (Italian Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor memory devices and electronic devices including the semiconductor memory devices" (South Korean Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Apparatus for small swing data transfer" (Japanese Inventor)

US Patent Issued to NORTHROP GRUMMAN SYSTEMS on Sept. 1 for "Leakage compensation circuit for content addressable memory (CAM) cell" (Maryland, New York Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Redundancy and majority voting in a key-value data storage system using content addressable memory" (American, Italian Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Integrated circuitry, memory circuitry comprising strings of memory cells, and methods used in forming integrated circuitry" (Singaporean, American Inventors)