ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,154, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Hyeono... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,155, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Sungeu... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,156, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor memory structure with support... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,157, issued on Sept. 1, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Memory cell including dual-antifuse device, memory struct... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,158, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Read-only memory device and met... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,159, issued on Sept. 1, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.). "Non-volatile memory cell with ONO compound ins... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,160, issued on Sept. 1, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "NOR-type memory device havin... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,161, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "3D NAND memory device with cross-stacking str... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,162, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device including replacemen... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,163, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Nonvolatile memory device and memory syst... Read More