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US Patent Issued to KunShan Go-Visionox Opto-Electronics on June 2 for "Thin film transistor array substrate, display panel and display device" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,185, issued on June 2, was assigned to KunShan Go-Visionox Opto-Electronics Co. Ltd (Kunshan, China). "Thin film transistor array substrate,... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 2 for "Semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,186, issued on June 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device" was invente... और पढ़ें


US Patent Issued to Wolfspeed on June 2 for "Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods" (North Carolina Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,187, issued on June 2, was assigned to Wolfspeed Inc. (Durham, N.C.). "Gate trench power semiconductor devices having trench shielding patte... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS, SOGANG UNIVERSITY RESEARCH FOUNDATION on June 2 for "Power semiconductor device including a shielding region" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,188, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and SOGANG UNIVERSITY RESEARCH FOUNDATION (Seoul,... और पढ़ें


US Patent Issued to Fujian Jinhua Integrated Circuit on June 2 for "Method of forming semiconductor structure having electrically conductive structure" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,189, issued on June 2, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Method of forming semiconductor st... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Semiconductor device with air-void in spacer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,190, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device with air-void in... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Transistor gate isolation structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,191, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor gate isolation structures ... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Stacked transistors having isolation layers between epitaxial structures" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,192, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Stacked transistors having isolation ... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on June 2 for "Power device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,193, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Power device and method of manufacturing the s... और पढ़ें


US Patent Issued to International Business Machines on June 2 for "Multiple gate dielectrics for monolithic stacked devices" (New York, California Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,194, issued on June 2, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multiple gate dielectrics for monolithic stack... और पढ़ें