US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Under epitaxy isolation structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,239, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Under epitaxy isolation structure" ... Read More

US Patent Issued to International Business Machines on Sept. 8 for "Structure with self-aligned offset gate contact and direct backside contact" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,240, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Structure with self-aligned offset gate cont... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Common rail contact" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,241, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Common rail contact" was invented b... Read More

US Patent Issued to Renesas Electronics on Sept. 8 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,243, issued on Sept. 8, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Method of manufacturing a semiconductor device with multi-layer gate spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,244, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of manufacturing a semicondu... Read More

US Patent Issued to International Business Machines on Sept. 8 for "Forksheet field effect transistor including t-shaped backbone" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,245, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Forksheet field effect transistor including ... Read More

US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,247, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device including a FWD region formed on a substra... Read More

US Patent Issued to Intel on Sept. 8 for "Gate link across gate cut in semiconductor devices" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,248, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Gate link across gate cut in semiconductor devices" was invente... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including a plurality of gate lines on a plurality of fin structures having different width portions" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,249, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device including a plurality o... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "FinFET with first fin on top of second fin" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,250, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsin-Chu, Taiwan). "FinFET with first fin on top o... Read More

• ««
• «
• 126644
• 126645
• 126646
• 126647
• 126648
• 126649
• 126650
• 126651
• 126652
• 126653
• »
• »»