US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Sept. 2 for "Semiconductor device and method of fabricating the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,400, issued on Sept. 2, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hubei, China).

"Semiconductor device and method of fabricating the same" was invented by Yajie Cheng (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the same are disclosed. The method includes: providing a substrate; forming a patterned mask layer on the substrate; and forming a drift region in the substrate by performing an ion implantation process using the patterned mask layer as a mask. The patterned mask layer has at least one opening with an overall width increasing in a direction from a sou...