INTERNATIONAL PATENT: HANGZHOU FULLSEMI SEMICONDUCTOR CO., LTD., 杭州富芯半导体有限公司 FILES APPLICATION FOR "SHIELDED-GATE TRENCH POWER DEVICE AND PREPARATION METHOD THEREFOR"

GENEVA, May 9 -- HANGZHOU FULLSEMI SEMICONDUCTOR CO., LTD. ((Binfu Corporation District) No. 135, Binfu Avenue, Lingqiao Town, Fuyang DistrictHangzhou, Zhejiang 311418), 杭州富芯半导体有限公司 (中国浙江省杭州市富阳区灵桥镇滨富大道135号（滨富合作区）) filed a patent application (PCT/CN2025/100631) for "SHIELDED-GATE TRENCH POWER DEVICE AND PREPARATION METHOD THEREFOR" on Jun 12, 2025. With publication no. WO/2026/091544, the details related to the patent application was published on May 07, 2026.

Notably, the patent applic...