ALEXANDRIA, Va., May 1 -- United States Patent no. 11,973,034, issued on April 30, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Nanotwin copper materials in semiconductor devices" was invented by Eric J. Bergman (Kalispell, Mont.), John L. Klocke (Kalispell, Mont.), Marvin L. Bernt (Kalispell, Mont.), Jing Xu (Kalispell, Mont.) and Kwan Wook Roh (Kalispell, Mont.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal struct...