India, April 19 -- Hitachi Power Semiconductor Device Ltd (HPSD) and Sagar Semiconductors (Sagar Semi) have built and advanced a collaboration with the signing of a Memorandum of Understanding (MoU) to conduct joint-marketing for high power devices such as IGBTs and SiC, new product development (NPD), and technology transfer of high-voltage diode.

This signing underscores a pivotal move towards fortifying India's semiconductor landscape and contributing significantly to the nation's 'Make in India' initiative.

The MoU, inked at Sagar Semiconductors' headquarters in Hyderabad, marks a new era of partnership between two companies. Present at the signing ceremony were Kedar Reddy, MD of Sagar Semiconductors, and Hirotaka Wakamatsu, Head of...